Maximum Continuous Drain Current:
2.5 A, 3 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
SOT-28FL, VEC8
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N, P
Length:
2.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.73mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
116 mΩ
FET Feature:
Logic Level Gate, 4V Drive
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
80mOhm @ 1.5A, 10V
edacadModel:
VEC2616-TL-W Models
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3A, 2.5A
edacadModelUrl:
/en/models/5819367
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
505pF @ 20V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-28FL/VEC8
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
VEC2616
ECCN:
EAR99
