Vishay Siliconix SIS590DN-T1-GE3
Product Information
FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Detailed Description:
Mosfet Array N and P-Channel 100V 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
TrenchFET®
Package / Case:
PowerPAK® 1212-8 Dual
Supplier Device Package:
PowerPAK® 1212-8 Dual
Manufacturer Standard Lead Time:
47 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Manufacturer:
Vishay Siliconix
Checking for live stock
FAQs
Yes. You can also search SIS590DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET21207654. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIS590DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in FET, MOSFET Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIS590DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIS590DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21207654 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21207654.
Yes. We ship SIS590DN-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIS590DN-T1-GE3. The FET features of the product include standard. It has a maximum Rds On and voltage of 167mohm @ 1.5a, 10v, 251mohm @ 2.3a, 10v. It features mosfet array n and p-channel 100v 2.7a (ta), 4a (tc), 2.3a (ta), 4a (tc) 2.5w (ta), 17.9w (tc), 2.6w (ta), 23.1w (tc) surface mount powerpak® 1212-8 dual. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in powerpak® 1212-8 dual. powerpak® 1212-8 dual is the supplier device package value. It has typical 47 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 2.5w (ta), 17.9w (tc), 2.6w (ta), 23.1w (tc). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 2.7a (ta), 4a (tc), 2.3a (ta), 4a (tc). The vishay siliconix's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.