Nexperia USA Inc. PSMN4R2-40VSHX

PSMN4R2-40VSHX Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
PSMN4R2-40VSHX Models
Current - Continuous Drain (Id) @ 25°C:
98A (Ta)
edacadModelUrl:
/en/models/13978585
Configuration:
2 N-Channel (Half Bridge)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds:
2590pF @ 25V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56D
Power - Max:
85W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN4R2
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN4R2-40VSHX. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.6v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 4.2mohm @ 20a, 10v. The maximum gate charge and given voltages include 37nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 98a (ta). The product is available in 2 n-channel (half bridge) configuration. It is shipped in tape & reel (tr) package . The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 2590pf @ 25v. It has a long 6 weeks standard lead time. The product is available in surface mount configuration. lfpak56d is the supplier device package value. The maximum power of the product is 85w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn4r2, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Test Chgs 4/Feb/2022(PCN Assembly/Origin)
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PSMN4R2-40VSH(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PSMN4R2-40VSHX and the best services all around the world ET20957902. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PSMN4R2-40VSHX, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PSMN4R2-40VSHX is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PSMN4R2-40VSHX. We stock a large inventory containing a wide range of variety ET20957902, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PSMN4R2-40VSHX. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET20957902 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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