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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN4R2-40VSHX. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.6v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 4.2mohm @ 20a, 10v. The maximum gate charge and given voltages include 37nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 98a (ta). The product is available in 2 n-channel (half bridge) configuration. It is shipped in tape & reel (tr) package . The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 2590pf @ 25v. It has a long 6 weeks standard lead time. The product is available in surface mount configuration. lfpak56d is the supplier device package value. The maximum power of the product is 85w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn4r2, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PSMN4R2-40VSHX and the best services all around the world ET20957902. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PSMN4R2-40VSHX, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.
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