FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 10V, 165nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Configuration:
2 N-Channel (Dual), Schottky
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1630pF @ 15V, 5550pF @ 15V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (6x5)
Power - Max:
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF906
ECCN:
EAR99
