Vishay Siliconix SIZ256DT-T1-GE3

SIZ256DT-T1-GE3 Vishay Siliconix
SIZ256DT-T1-GE3
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
Rds On (Max) @ Id, Vgs:
17.6mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
11.5A (Ta), 31.8A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
70V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 35V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (3.3x3.3)
Power - Max:
4.3W (Ta), 33W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZ256
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIZ256DT-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. The maximum gate charge and given voltages include 27nc @ 10v. It has a maximum Rds On and voltage of 17.6mohm @ 7a, 4.5v. The continuous current drain at 25°C is 11.5a (ta), 31.8a (tc). The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 70v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1060pf @ 35v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. 8-powerpair® (3.3x3.3) is the supplier device package value. The maximum power of the product is 4.3w (ta), 33w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siz256, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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SiZ256DT(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Vishay Siliconix SIZ256DT-T1-GE3 and the best services all around the world ET20919987. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Vishay Siliconix SIZ256DT-T1-GE3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Vishay Siliconix, commonly silicon.

Our Vishay Siliconix SIZ256DT-T1-GE3 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SIZ256DT-T1-GE3. We stock a large inventory containing a wide range of variety ET20919987, differentiates by its unique features Vishay Siliconix. We also have discounts for potential customers and let it until most of them avail from Vishay Siliconix SIZ256DT-T1-GE3. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET20919987 from leading Vishay Siliconix, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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