Vishay Siliconix SI7252ADP-T1-GE3

SI7252ADP-T1-GE3 Vishay Siliconix
SI7252ADP-T1-GE3
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs:
18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
26.5nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SI7252ADP-T1-GE3 Models
Current - Continuous Drain (Id) @ 25°C:
9.3A (Ta), 28.7A (Tc)
edacadModelUrl:
/en/models/13692596
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1266pF @ 50V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual
Power - Max:
3.6W (Ta), 33.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7252
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI7252ADP-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8 dual. It has a maximum Rds On and voltage of 18.6mohm @ 10a, 10v. The maximum gate charge and given voltages include 26.5nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 9.3a (ta), 28.7a (tc). The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 100v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1266pf @ 50v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 dual is the supplier device package value. The maximum power of the product is 3.6w (ta), 33.8w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si7252, a base product number of the product. The product is designated with the ear99 code number.

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New solder paste 26/May/2023(PCN Assembly/Origin)
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SI7252ADP(Datasheets)
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Mult Dev 07/Jun/2023(PCN Design/Specification)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Vishay Siliconix SI7252ADP-T1-GE3 and the best services all around the world ET20919969. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Vishay Siliconix SI7252ADP-T1-GE3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Vishay Siliconix, commonly silicon.

Our Vishay Siliconix SI7252ADP-T1-GE3 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SI7252ADP-T1-GE3. We stock a large inventory containing a wide range of variety ET20919969, differentiates by its unique features Vishay Siliconix. We also have discounts for potential customers and let it until most of them avail from Vishay Siliconix SI7252ADP-T1-GE3. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET20919969 from leading Vishay Siliconix, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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