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This is manufactured by Infineon Technologies. The manufacturer part number is IAUC60N04S6L045HATMA1. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 4.5mohm @ 30a, 10v. The maximum gate charge and given voltages include 19nc @ 10v. The typical Vgs (th) (max) of the product is 2v @ 13µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 60a (tj). The product is available in 2 n-channel (half bridge) configuration. It is shipped in tape & reel (tr) package . The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1136pf @ 25v. It has a long 18 weeks standard lead time. The product is available in surface mount configuration. The product is automotive, a grade of class. The product optimos™, is a highly preferred choice for users. pg-tdson-8-57 is the supplier device package value. The maximum power of the product is 52w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to iauc60, a base product number of the product. The product is designated with the ear99 code number.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Infineon Technologies IAUC60N04S6L045HATMA1 and the best services all around the world ET20918630. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Infineon Technologies IAUC60N04S6L045HATMA1, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Infineon Technologies, commonly silicon.
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