ON Semiconductor HUFA76407DK8TF085P

HUFA76407DK8TF085P ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
90mOhm @ 3.8A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 3.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
330pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
UltraFET™
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2.5W (Ta)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HUFA76407DK8TF085P. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 90mohm @ 3.8a, 10v. It features mosfet array 2 n-channel (dual) 60v 3.8a (ta) 2.5w (ta) surface mount 8-soic. The product's input capacitance at maximum includes 330pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product ultrafet™, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2.5w (ta). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 3.8a (ta). The on semiconductor's product offers user-desired applications.

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