Microchip Technology MSCSM120AM31CT1AG

MSCSM120AM31CT1AG Microchip Technology
Microchip Technology

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs:
232nC @ 20V
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
89A (Tc)
Configuration:
2 N Channel (Phase Leg)
Package:
Tube
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds:
3020pF @ 1000V
standardLeadTime:
37 Weeks
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SP1F
Power - Max:
395W (Tc)
Technology:
Silicon Carbide (SiC)
Base Product Number:
MSCSM120
ECCN:
EAR99
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This is manufactured by Microchip Technology. The manufacturer part number is MSCSM120AM31CT1AG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has -40°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 31mohm @ 40a, 20v. The maximum gate charge and given voltages include 232nc @ 20v. In addition, it is reach unaffected. The continuous current drain at 25°C is 89a (tc). The product is available in 2 n channel (phase leg) configuration. It is shipped in tube package . The product has a 1200v (1.2kv) drain to source voltage. The product's input capacitance at maximum includes 3020pf @ 1000v. It has a long 37 weeks standard lead time. The product is available in chassis mount configuration. sp1f is the supplier device package value. The maximum power of the product is 395w (tc). This product use silicon carbide (sic) technology. Moreover, it corresponds to mscsm120, a base product number of the product. The product is designated with the ear99 code number.

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Assembly Site 08/Aug/2023(PCN Assembly/Origin)
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Microchip CA Prop65(Environmental Information)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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