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ON Semiconductor NVMFD020N06CT1G

ON Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
NVMFD020
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 8A (Ta), 27A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
355pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
5.8nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 20µA
Series:
Automotive, AEC-Q101
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
20.3mOhm @ 4A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer Standard Lead Time:
22 Weeks
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 27A (Tc)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMFD020N06CT1G. The FET features of the product include standard. Base Part Number: nvmfd020. It features mosfet array 2 n-channel (dual) 60v 8a (ta), 27a (tc) 3.1w (ta), 31w (tc) surface mount 8-dfn (5x6) dual flag (so8fl-dual). The product's input capacitance at maximum includes 355pf @ 30v. The maximum gate charge and given voltages include 5.8nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 20µa. The product automotive, aec-q101, is a highly preferred choice for users. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 20.3mohm @ 4a, 10v. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. It has typical 22 weeks of manufacturer standard lead time. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 3.1w (ta), 31w (tc). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 8a (ta), 27a (tc). The on semiconductor's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NVMFD020N06CT1G and the best services all around the world ET20002403. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NVMFD020N06CT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NVMFD020N06CT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NVMFD020N06CT1G. We stock a large inventory containing a wide range of variety ET20002403, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NVMFD020N06CT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET20002403 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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