Renesas Electronics America UPA2351T1P-E4-A

Renesas Electronics America

Product Information

FET Feature:
Logic Level Gate, 2.5V Drive
Rds On (Max) @ Id, Vgs:
40mOhm @ 3A, 4.5V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 5.7A (Ta) 1.3W (Ta) Surface Mount 4-EFLIP-LGA (1.62x1.62)
Input Capacitance (Ciss) (Max) @ Vds:
523pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
7.1nC @ 4V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
4-XFLGA
Supplier Device Package:
4-EFLIP-LGA (1.62x1.62)
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is UPA2351T1P-E4-A. The FET features of the product include logic level gate, 2.5v drive. It has a maximum Rds On and voltage of 40mohm @ 3a, 4.5v. It features mosfet array 2 n-channel (dual) common drain 30v 5.7a (ta) 1.3w (ta) surface mount 4-eflip-lga (1.62x1.62). The product's input capacitance at maximum includes 523pf @ 10v. The maximum gate charge and given voltages include 7.1nc @ 4v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 4-xflga. 4-eflip-lga (1.62x1.62) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 n-channel (dual) common drain. The maximum power of the product is 1.3w (ta). The continuous current drain at 25°C is 5.7a (ta). The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Renesas Electronics America UPA2351T1P-E4-A and the best services all around the world ET19642484. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Renesas Electronics America UPA2351T1P-E4-A, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Renesas Electronics America, commonly silicon.

Our Renesas Electronics America UPA2351T1P-E4-A is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at UPA2351T1P-E4-A. We stock a large inventory containing a wide range of variety ET19642484, differentiates by its unique features Renesas Electronics America. We also have discounts for potential customers and let it until most of them avail from Renesas Electronics America UPA2351T1P-E4-A. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET19642484 from leading Renesas Electronics America, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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