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Renesas Electronics America HAT2210RWS-E

Renesas Electronics America

Product Information

FET Feature:
Logic Level Gate, 4.5V Drive
Rds On (Max) @ Id, Vgs:
24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual), Schottky 30V 7.5A (Ta), 8A (Ta) 1.5W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
630pF @ 10V, 1330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
4.6nC @ 4.5V, 11nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
2 N-Channel (Dual), Schottky
Customer Reference:
Power - Max:
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta), 8A (Ta)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is HAT2210RWS-E. The FET features of the product include logic level gate, 4.5v drive. It has a maximum Rds On and voltage of 24mohm @ 3.75a, 10v, 22mohm @ 4a, 10v. It features mosfet array 2 n-channel (dual), schottky 30v 7.5a (ta), 8a (ta) 1.5w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 630pf @ 10v, 1330pf @ 10v. The maximum gate charge and given voltages include 4.6nc @ 4.5v, 11nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-sop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 n-channel (dual), schottky. The maximum power of the product is 1.5w (ta). The continuous current drain at 25°C is 7.5a (ta), 8a (ta). The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Renesas Electronics America HAT2210RWS-E and the best services all around the world ET19640523. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Renesas Electronics America HAT2210RWS-E, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Renesas Electronics America, commonly silicon.

Our Renesas Electronics America HAT2210RWS-E is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at HAT2210RWS-E. We stock a large inventory containing a wide range of variety ET19640523, differentiates by its unique features Renesas Electronics America. We also have discounts for potential customers and let it until most of them avail from Renesas Electronics America HAT2210RWS-E. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET19640523 from leading Renesas Electronics America, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157

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