Renesas Electronics America HAT1126RWS-E

Renesas Electronics America

Product Information

FET Feature:
Logic Level Gate, 4.5V Drive
Rds On (Max) @ Id, Vgs:
50mOhm @ 3A, 10V
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 60V 6A (Ta) 3W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
2300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is HAT1126RWS-E. The FET features of the product include logic level gate, 4.5v drive. It has a maximum Rds On and voltage of 50mohm @ 3a, 10v. It features mosfet array 2 p-channel (dual) 60v 6a (ta) 3w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 2300pf @ 10v. The maximum gate charge and given voltages include 37nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 60v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-sop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 3w (ta). The continuous current drain at 25°C is 6a (ta). The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)

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