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Renesas Electronics America UPA3753GR-E1-AX

Renesas Electronics America

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
56mOhm @ 2.5A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 5A (Ta) 1.12W Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
640pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
13.4nC @ 10V
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.12W
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is UPA3753GR-E1-AX. The FET features of the product include standard. It has a maximum Rds On and voltage of 56mohm @ 2.5a, 10v. It features mosfet array 2 n-channel (dual) 60v 5a (ta) 1.12w surface mount 8-sop. The product's input capacitance at maximum includes 640pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 13.4nc @ 10v. The product has a 60v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). 8-sop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.12w. The continuous current drain at 25°C is 5a (ta). The renesas electronics america's product offers user-desired applications.

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µPA3753GR(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Renesas Electronics America UPA3753GR-E1-AX and the best services all around the world ET19638673. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Renesas Electronics America UPA3753GR-E1-AX, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Renesas Electronics America, commonly silicon.

Our Renesas Electronics America UPA3753GR-E1-AX is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at UPA3753GR-E1-AX. We stock a large inventory containing a wide range of variety ET19638673, differentiates by its unique features Renesas Electronics America. We also have discounts for potential customers and let it until most of them avail from Renesas Electronics America UPA3753GR-E1-AX. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET19638673 from leading Renesas Electronics America, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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