Powerex Inc. QJD1210SA2

Powerex Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.6V @ 34mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
Module
Gate Charge (Qg) (Max) @ Vgs:
330nC @ 15V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
17mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C:
100A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
8200pF @ 10V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
Module
Power - Max:
415W
Technology:
Silicon Carbide (SiC)
Base Product Number:
QJD1210
ECCN:
EAR99
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This is manufactured by Powerex Inc.. The manufacturer part number is QJD1210SA2. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.6v @ 34ma. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. The maximum gate charge and given voltages include 330nc @ 15v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 17mohm @ 100a, 15v. The continuous current drain at 25°C is 100a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 8200pf @ 10v. The product is available in chassis mount configuration. module is the supplier device package value. The maximum power of the product is 415w. This product use silicon carbide (sic) technology. Moreover, it corresponds to qjd1210, a base product number of the product. The product is designated with the ear99 code number.

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QJD1210SA2 Preliminary Datasheet(Datasheets)
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Next Generation Power Semiconductors Brief(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Powerex Inc. QJD1210SA2 and the best services all around the world ET19630064. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Powerex Inc. QJD1210SA2, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Powerex Inc., commonly silicon.

Our Powerex Inc. QJD1210SA2 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at QJD1210SA2. We stock a large inventory containing a wide range of variety ET19630064, differentiates by its unique features Powerex Inc.. We also have discounts for potential customers and let it until most of them avail from Powerex Inc. QJD1210SA2. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET19630064 from leading Powerex Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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You can order Powerex Inc. brand products with QJD1210SA2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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Yes. We ship QJD1210SA2 Internationally to many countries around the world.