Microsemi Corporation APTM100VDA35T3G

Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
SP3
Gate Charge (Qg) (Max) @ Vgs:
186nC @ 10V
Rds On (Max) @ Id, Vgs:
420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C:
22A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
1000V (1kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5200pF @ 25V
Mounting Type:
Chassis Mount
Series:
POWER MOS 7®
Supplier Device Package:
SP3
Power - Max:
390W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APTM100
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100VDA35T3G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sp3. The maximum gate charge and given voltages include 186nc @ 10v. It has a maximum Rds On and voltage of 420mohm @ 11a, 10v. The continuous current drain at 25°C is 22a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 1000v (1kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5200pf @ 25v. The product is available in chassis mount configuration. The product power mos 7®, is a highly preferred choice for users. sp3 is the supplier device package value. The maximum power of the product is 390w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to aptm100, a base product number of the product. The product is designated with the ear99 code number.

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