Deliver to
United Kingdom
Enjoy 10% savings with code 'SAVE10' when you spend £50 or more! Available online only—enter the code at checkout!
This is manufactured by Nexperia USA Inc.. The manufacturer part number is NX1029XH. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 1.6ohm @ 500ma, 10v, 7.5ohm @ 100ma, 10v. The maximum gate charge and given voltages include 0.6nc @ 4.5v, 0.35nc @ 5v. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 330ma (ta), 170ma (ta). The product is available in n and p-channel complementary configuration. The nexperia usa inc.'s product offers user-desired applications. The product has a 50v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 50pf @ 10v, 36pf @ 25v. The product is available in surface mount configuration. The product is automotive, a grade of class. sot-666 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 330mw (ta), 1.09w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nx1029, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. NX1029XH and the best services all around the world ET18478451. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. NX1029XH, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.
Our Nexperia USA Inc. NX1029XH is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NX1029XH. We stock a large inventory containing a wide range of variety ET18478451, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. NX1029XH. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET18478451 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
Basket Total:
£ 0
