Typical Gate Charge @ Vgs:
49 @ 4.5 V nC
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
±12 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.17mm
Width:
2.13mm
Length:
3.23mm
Package Type:
WLCSP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
10
Transistor Configuration:
Dual
FET Feature:
Standard
Base Part Number:
EFC4K110
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 24V 25A 2.5W Surface Mount 10-WLCSP (3.2x2.1)
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 4.5V
Drain to Source Voltage (Vdss):
24V
Package / Case:
10-SMD, No Lead
Supplier Device Package:
10-WLCSP (3.2x2.1)
Manufacturer Standard Lead Time:
50 Weeks
Packaging:
Cut Tape (CT)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
2.5W
Current - Continuous Drain (Id) @ 25°C:
25A
Manufacturer:
ON Semiconductor
