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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P69NU,LF. The FET features of the product include logic level gate, 1.8v drive. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 45mohm @ 3.5a, 10v. The maximum gate charge and given voltages include 6.74nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 4a (ta). The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 480pf @ 10v. It has a long 16 weeks standard lead time. The product is available in surface mount configuration. 6-µdfn (2x2) is the supplier device package value. The maximum power of the product is 1w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6p69, a base product number of the product. The product is designated with the ear99 code number.
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