Toshiba Semiconductor and Storage SSM6N17FU(TE85L,F)

SSM6N17FU-TE85L-F- Toshiba Semiconductor and Storage SSM6N17FU(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 1µA
Operating Temperature:
150°C
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
20Ohm @ 10mA, 4V
edacadModel:
SSM6N17FU(TE85L,F) Models
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
edacadModelUrl:
/en/models/10259831
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
7pF @ 3V
standardLeadTime:
36 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Power - Max:
200mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6N17
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N17FU(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 1µa. The product has 150°c operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 20ohm @ 10ma, 4v. The product is rohs3 compliant. The continuous current drain at 25°C is 100ma (ta). The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 50v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 7pf @ 3v. It has a long 36 weeks standard lead time. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6n17, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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