FET Feature:
Logic Level Gate, 1.5V Drive
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V, 1.76nC @ 4.5V
Vgs(th) (Max) @ Id:
1V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SSM6L14FE(TE85L,F) Models
Current - Continuous Drain (Id) @ 25°C:
800mA (Ta), 720mA (Ta)
edacadModelUrl:
/en/models/10259878
Configuration:
N and P-Channel
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
90pF @ 10V, 110pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Packaging:
Tape & Reel (TR)
Power - Max:
150mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6L14
ECCN:
EAR99