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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N55NU,LF. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 46mohm @ 4a, 10v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. The continuous current drain at 25°C is 4a. The product is available in 2 n-channel (dual) configuration. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 280pf @ 15v. The product is available in surface mount configuration. 6-µdfn (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6n55, a base product number of the product. The product is designated with the ear99 code number.
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