Toshiba Semiconductor and Storage SSM6P35AFU,LF

SSM6P35AFU-LF Toshiba Semiconductor and Storage SSM6P35AFU,LF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate, 1.2V Drive
Base Part Number:
SSM6P35
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 250mA (Ta) 285mW (Ta) Surface Mount US6
Input Capacitance (Ciss) (Max) @ Vds:
42pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 100µA
Series:
U-MOSVII
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 150mA, 4.5V
Supplier Device Package:
US6
Manufacturer Standard Lead Time:
12 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
285mW (Ta)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P35AFU,LF. The FET features of the product include logic level gate, 1.2v drive. Base Part Number: ssm6p35. It features mosfet array 2 p-channel (dual) 20v 250ma (ta) 285mw (ta) surface mount us6. The product's input capacitance at maximum includes 42pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 100µa. The product u-mosvii, is a highly preferred choice for users. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 1.4ohm @ 150ma, 4.5v. us6 is the supplier device package value. It has typical 12 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 285mw (ta). The product has a 20v drain to source voltage. The continuous current drain at 25°C is 250ma (ta). The toshiba semiconductor and storage's product offers user-desired applications.

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