FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.9V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerSMD, Flat Leads
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V, 52nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
820pF @ 15V, 2555pF @ 15V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6)
Power - Max:
3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
AONY363
ECCN:
EAR99
