Diodes Incorporated DMT2005UDV-13

DMT2005UDV-13 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
7mOhm @ 14A, 10V
title:
DMT2005UDV-13
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Configuration:
2 N-Channel (Dual)
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
24V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
27 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2060pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
46.7nC @ 10V
Supplier Device Package:
PowerDI3333-8 (Type UXC)
Packaging:
Tape & Reel (TR)
Power - Max:
900mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT2005
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMT2005UDV-13. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 7mohm @ 14a, 10v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 50a (tc). The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. The product has a 24v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 27 weeks standard lead time. The product's input capacitance at maximum includes 2060pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 46.7nc @ 10v. powerdi3333-8 (type uxc) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 900mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmt2005, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev 06/Dec/2019(PCN Assembly/Origin)
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DMT2005UDV(Datasheets)
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Diodes Environmental Compliance Cert(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMT2005UDV-13 and the best services all around the world ET17821439. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMT2005UDV-13, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

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