Vishay Siliconix SQJ560EP-T1_GE3

SQJ560EP-T1_GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V, 45nC @ 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
edacadModel:
SQJ560EP-T1_GE3 Models
Current - Continuous Drain (Id) @ 25°C:
30A (Tc), 18A (Tc)
edacadModelUrl:
/en/models/9462337
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1650pF @ 25V
Qualification:
AEC-Q101
standardLeadTime:
57 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual
Power - Max:
34W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ560
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SQJ560EP-T1_GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8 dual. It has a maximum Rds On and voltage of 12mohm @ 10a, 10v, 52.6mohm @ 10a, 10v. The maximum gate charge and given voltages include 30nc @ 10v, 45nc @ 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The continuous current drain at 25°C is 30a (tc), 18a (tc). The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1650pf @ 25v. It has a long 57 weeks standard lead time. The product is available in surface mount configuration. The product is automotive, a grade of class. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 dual is the supplier device package value. The maximum power of the product is 34w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sqj560, a base product number of the product. The product is designated with the ear99 code number.

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SQJ560EP(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Vishay Siliconix SQJ560EP-T1_GE3 and the best services all around the world ET17730137. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Vishay Siliconix SQJ560EP-T1_GE3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Vishay Siliconix, commonly silicon.

Our Vishay Siliconix SQJ560EP-T1_GE3 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SQJ560EP-T1_GE3. We stock a large inventory containing a wide range of variety ET17730137, differentiates by its unique features Vishay Siliconix. We also have discounts for potential customers and let it until most of them avail from Vishay Siliconix SQJ560EP-T1_GE3. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET17730137 from leading Vishay Siliconix, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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