FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V, 20nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc)
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
910pF @ 15V, 1300pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6)
Power - Max:
1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
AON6912
ECCN:
EAR99
