Nexperia USA Inc. BUK9MTT-65PBB,518

Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
20-SOIC (0.295", 7.50mm Width)
Rds On (Max) @ Id, Vgs:
90.4mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
6.3nC @ 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
65V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
535pF @ 25V
Mounting Type:
Surface Mount
Series:
TrenchPLUS
Supplier Device Package:
20-SO
Power - Max:
3.15W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK9M
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is BUK9MTT-65PBB,518. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 20-soic (0.295", 7.50mm width). It has a maximum Rds On and voltage of 90.4mohm @ 3a, 10v. The maximum gate charge and given voltages include 6.3nc @ 5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.8a (tc). The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 65v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 535pf @ 25v. The product is available in surface mount configuration. The product trenchplus, is a highly preferred choice for users. 20-so is the supplier device package value. The maximum power of the product is 3.15w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to buk9m, a base product number of the product. The product is designated with the ear99 code number.

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Mult Devices EOL 12/Jul/2018(PCN Obsolescence/ EOL)
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Mult Devices EOL 30/Jun/2018(PCN Obsolescence/ EOL)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. BUK9MTT-65PBB,518 and the best services all around the world ET17088212. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. BUK9MTT-65PBB,518, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. BUK9MTT-65PBB,518 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at BUK9MTT-65PBB,518. We stock a large inventory containing a wide range of variety ET17088212, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. BUK9MTT-65PBB,518. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET17088212 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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