Maximum Continuous Drain Current:
40 (Channnel 1) A, 60 (Channel 2) A
Transistor Material:
Si
Width:
6mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
PowerPAIR 6 x 5
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
26.6 W, 60 W
Series:
TrenchFET
Maximum Gate Source Voltage:
+16 V, +20 V, -12 V, -16 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.4V @ 250µA, 2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V, 95nC @ 10V
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 40A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 15V, 4320pF @ 15V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (6x5)
Power - Max:
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF916
ECCN:
EAR99
