ON Semiconductor FDMD8430

ON Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
FDMD84
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Source 30V 28A (Ta), 95A (Tc) 2.1W (Ta), 29W (Tc) Surface Mount 8-PQFN (3.3x5)
Input Capacitance (Ciss) (Max) @ Vds:
5035pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
90nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
2.12mOhm @ 28A, 10V
Supplier Device Package:
8-PQFN (3.3x5)
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Source
Customer Reference:
Power - Max:
2.1W (Ta), 29W (Tc)
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 95A (Tc)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDMD8430. The FET features of the product include standard. Base Part Number: fdmd84. It features mosfet array 2 n-channel (dual) common source 30v 28a (ta), 95a (tc) 2.1w (ta), 29w (tc) surface mount 8-pqfn (3.3x5). The product's input capacitance at maximum includes 5035pf @ 15v. The maximum gate charge and given voltages include 90nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 2.12mohm @ 28a, 10v. 8-pqfn (3.3x5) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) common source. The maximum power of the product is 2.1w (ta), 29w (tc). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 28a (ta), 95a (tc). The on semiconductor's product offers user-desired applications.

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Mult Devices EOL 12/Apr/2019(PCN Obsolescence/ EOL)
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FDMD8430(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDMD8430 and the best services all around the world ET16861719. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDMD8430, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDMD8430 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMD8430. We stock a large inventory containing a wide range of variety ET16861719, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDMD8430. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET16861719 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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