Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Width:
1.2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.8 nC @ 4.5 V
Channel Type:
N
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
625 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
700 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDY30
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 600mA 446mW Surface Mount SOT-563F
Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
1.1nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Series:
PowerTrench®
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
700mOhm @ 600mA, 4.5V
Supplier Device Package:
SOT-563F
Manufacturer Standard Lead Time:
26 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
446mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
600mA
Manufacturer:
ON Semiconductor
