Maximum Continuous Drain Current:
120 A
Width:
5.1mm
Transistor Configuration:
Dual Base
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
LSON-CLIP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.75V
Maximum Operating Temperature:
+125 °C
Typical Gate Charge @ Vgs:
18 nC, 40 nC
Channel Type:
P
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12 W
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +10 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
FET Feature:
Logic Level Gate, 5V Drive
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 155°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
-
title:
CSD87355Q5DT
Vgs(th) (Max) @ Id:
1.9V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD87355Q5DT Models
Current - Continuous Drain (Id) @ 25°C:
45A
edacadModelUrl:
/en/models/5994578
Configuration:
2 N-Channel (Dual) Asymmetrical
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1860pF @ 15V
Mounting Type:
Surface Mount
Series:
NexFET™
Gate Charge (Qg) (Max) @ Vgs:
13.7nC @ 4.5V
Supplier Device Package:
8-LSON (5x6)
Packaging:
Tape & Reel (TR)
Power - Max:
2.8W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87355Q5
ECCN:
EAR99
