Nexperia USA Inc. PMGD370XN,115

PMGD370XN-115 Nexperia USA Inc. PMGD370XN,115
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
440mOhm @ 200mA, 4.5V
edacadModel:
PMGD370XN,115 Models
Gate Charge (Qg) (Max) @ Vgs:
0.65nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
740mA
edacadModelUrl:
/en/models/949652
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
37pF @ 25V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
6-TSSOP
Power - Max:
410mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMGD370
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMGD370XN,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 440mohm @ 200ma, 4.5v. The maximum gate charge and given voltages include 0.65nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 740ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 37pf @ 25v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 6-tssop is the supplier device package value. The maximum power of the product is 410mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmgd370, a base product number of the product. The product is designated with the ear99 code number.

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Resin Hardener 02/Jul/2013(PCN Design/Specification)
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Multiple Devices 05/Jul/2015(PCN Obsolescence/ EOL)
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PMGD370XN(Datasheets)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)
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Lighter Reels 02/Jan/2014(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMGD370XN,115 and the best services all around the world ET16492524. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMGD370XN,115, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

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