Fairchild/ON Semiconductor FDC6305N

FDC6305N Fairchild/ON Semiconductor
FDC6305N
FDC6305N
Fairchild/ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
9 Weeks
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Continuous Drain (Id) @ 25°C:
2.7A
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
80 mOhm @ 2.7A, 4.5V
FET Type:
2 N-Channel (Dual)
Standard Package:
1
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Packaging:
Cut Tape (CT)
Power - Max:
700mW
Other Names:
FDC6305NCT
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FDC6305N. The FET features of the product include logic level gate. It has typical 9 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The continuous current drain at 25°C is 2.7a. The maximum gate charge and given voltages include 5nc @ 4.5v. It has a maximum Rds On and voltage of 80 mohm @ 2.7a, 4.5v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The fairchild/on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 310pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 700mw. Alternative Names include fdc6305nct.

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FDC6305N(Datasheets)
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Mold Compound 08/April/2008(PCN Design/Specification)
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1342 (UK2011-EN PDF)(Catalog Page)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Fairchild/ON Semiconductor FDC6305N and the best services all around the world ET16438378. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Fairchild/ON Semiconductor FDC6305N, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Fairchild/ON Semiconductor, commonly silicon.

Our Fairchild/ON Semiconductor FDC6305N is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDC6305N. We stock a large inventory containing a wide range of variety ET16438378, differentiates by its unique features Fairchild/ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from Fairchild/ON Semiconductor FDC6305N. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET16438378 from leading Fairchild/ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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