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United Kingdom
This is manufactured by NXP USA Inc.. The manufacturer part number is PMWD26UN,518. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 700mv @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-tssop (0.173", 4.40mm width). It has a maximum Rds On and voltage of 30mohm @ 3.5a, 4.5v. The maximum gate charge and given voltages include 23.6nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 7.8a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1366pf @ 16v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-tssop is the supplier device package value. The maximum power of the product is 3.1w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmwd26, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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