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This is manufactured by NXP USA Inc.. The manufacturer part number is PMDPB65UP,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. It has a maximum Rds On and voltage of 70mohm @ 1a, 4.5v. The maximum gate charge and given voltages include 6nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.5a. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 380pf @ 10v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 520mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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