Microsemi Corporation APTM120A80FT1G

Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
SP1
Gate Charge (Qg) (Max) @ Vgs:
260nC @ 10V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
960mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C:
14A
Configuration:
2 N-Channel (Half Bridge)
Package:
Bulk
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
6696pF @ 25V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SP1
Power - Max:
357W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APTM120
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM120A80FT1G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sp1. The maximum gate charge and given voltages include 260nc @ 10v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 960mohm @ 12a, 10v. The continuous current drain at 25°C is 14a. The product is available in 2 n-channel (half bridge) configuration. It is shipped in bulk package . The product has a 1200v (1.2kv) drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 6696pf @ 25v. The product is available in chassis mount configuration. sp1 is the supplier device package value. The maximum power of the product is 357w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to aptm120, a base product number of the product. The product is designated with the ear99 code number.

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APTM120A80FT1G(Datasheets)
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High-Voltage Power Discretes and Modules(Datasheets)
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Microchip CA Prop65(Environmental Information)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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