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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100H80FT1G. The FET features of the product include standard. It has a maximum Rds On and voltage of 960mohm @ 9a, 10v. It features mosfet array 4 n-channel (h-bridge) 1000v (1kv) 11a 208w chassis mount sp1. The product's input capacitance at maximum includes 3876pf @ 25v. The maximum gate charge and given voltages include 150nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has a 1000v (1kv) drain to source voltage. Moreover, the product comes in sp1. sp1 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 208w. The continuous current drain at 25°C is 11a. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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