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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100H46FT3G. The FET features of the product include standard. It has a maximum Rds On and voltage of 552mohm @ 16a, 10v. It features mosfet array 4 n-channel (h-bridge) 1000v (1kv) 19a 357w chassis mount sp3. The product's input capacitance at maximum includes 6800pf @ 25v. The maximum gate charge and given voltages include 260nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product power mos 8™, is a highly preferred choice for users. Moreover, the product comes in sp3. sp3 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 357w. The product has a 1000v (1kv) drain to source voltage. The continuous current drain at 25°C is 19a. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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