Microsemi Corporation APTC90AM60T1G

Microsemi Corporation

Product Information

FET Feature:
Super Junction
Rds On (Max) @ Id, Vgs:
60mOhm @ 52A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 900V 59A 462W Chassis Mount SP1
Input Capacitance (Ciss) (Max) @ Vds:
13600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:
540nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
3.5V @ 6mA
Series:
CoolMOS™
Package / Case:
SP1
Supplier Device Package:
SP1
Packaging:
Tray
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Power - Max:
462W
Drain to Source Voltage (Vdss):
900V
Current - Continuous Drain (Id) @ 25°C:
59A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTC90AM60T1G. The FET features of the product include super junction. It has a maximum Rds On and voltage of 60mohm @ 52a, 10v. It features mosfet array 2 n-channel (half bridge) 900v 59a 462w chassis mount sp1. The product's input capacitance at maximum includes 13600pf @ 100v. The maximum gate charge and given voltages include 540nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 3.5v @ 6ma. The product coolmos™, is a highly preferred choice for users. Moreover, the product comes in sp1. sp1 is the supplier device package value. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 462w. The product has a 900v drain to source voltage. The continuous current drain at 25°C is 59a. The microsemi corporation's product offers user-desired applications.

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STD Dev EOL Jul/2018(PCN Obsolescence/ EOL)

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