Microsemi Corporation APTC80H29T1G

Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.9V @ 1mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
SP1
Gate Charge (Qg) (Max) @ Vgs:
90nC @ 10V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
290mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C:
15A
Configuration:
4 N-Channel (Half Bridge)
Package:
Bulk
Drain to Source Voltage (Vdss):
800V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2254pF @ 25V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SP1
Power - Max:
156W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APTC80
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTC80H29T1G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.9v @ 1ma. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sp1. The maximum gate charge and given voltages include 90nc @ 10v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 290mohm @ 7.5a, 10v. The continuous current drain at 25°C is 15a. The product is available in 4 n-channel (half bridge) configuration. It is shipped in bulk package . The product has a 800v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2254pf @ 25v. The product is available in chassis mount configuration. sp1 is the supplier device package value. The maximum power of the product is 156w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to aptc80, a base product number of the product. The product is designated with the ear99 code number.

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APTC80H29T1G(Datasheets)
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Power Products Catalog(Datasheets)
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Microchip CA Prop65(Environmental Information)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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