Diodes Incorporated DMN3035LWN-13

Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
35mOhm @ 4.8A, 10V
title:
DMN3035LWN-13
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
Configuration:
2 N-Channel (Dual)
Manufacturer:
Diodes Incorporated
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
399pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
4.5nC @ 4.5V
Supplier Device Package:
V-DFN3020-8
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN3035
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN3035LWN-13. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 35mohm @ 4.8a, 10v. The typical Vgs (th) (max) of the product is 2v @ 250µa. In addition, it is reach unaffected. The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 399pf @ 15v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 4.5nc @ 4.5v. v-dfn3020-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn3035, a base product number of the product. The product is designated with the ear99 code number.

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DMN3035LWN(Datasheets)
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Diodes Environmental Compliance Cert(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN3035LWN-13 and the best services all around the world ET15914469. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN3035LWN-13, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

Our Diodes Incorporated DMN3035LWN-13 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at DMN3035LWN-13. We stock a large inventory containing a wide range of variety ET15914469, differentiates by its unique features Diodes Incorporated. We also have discounts for potential customers and let it until most of them avail from Diodes Incorporated DMN3035LWN-13. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET15914469 from leading Diodes Incorporated, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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