EPC EPC2103ENG

EPC2103ENG EPC
EPC

Product Information

FET Feature:
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 20A, 5V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Surface Mount Die
Input Capacitance (Ciss) (Max) @ Vds:
760pF @ 40V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 7mA
Series:
eGaN®
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 5V
Supplier Device Package:
Die
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Package / Case:
Die
Drain to Source Voltage (Vdss):
80V
Current - Continuous Drain (Id) @ 25°C:
23A
Manufacturer:
EPC
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This is 2103ENG manufactured by EPC. The manufacturer part number is EPC2103ENG. The FET features of the product include ganfet (gallium nitride). It has a maximum Rds On and voltage of 5.5mohm @ 20a, 5v. It features mosfet array 2 n-channel (half bridge) 80v 23a surface mount die. The product's input capacitance at maximum includes 760pf @ 40v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 7ma. The product egan®, is a highly preferred choice for users. The maximum gate charge and given voltages include 6.5nc @ 5v. die is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Moreover, the product comes in die. The product has a 80v drain to source voltage. The continuous current drain at 25°C is 23a. The epc's product offers user-desired applications.

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EPC2103 Datasheet(Datasheets)
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Die Removal Procedure(Mfg Application Notes)
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Assembling eGaN® FETs(Mfg Application Notes)
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Die Attach Procedure(Mfg Application Notes)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative EPC EPC2103ENG and the best services all around the world ET15910191. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, EPC EPC2103ENG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as EPC, commonly silicon.

Our EPC EPC2103ENG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at EPC2103ENG. We stock a large inventory containing a wide range of variety ET15910191, differentiates by its unique features EPC. We also have discounts for potential customers and let it until most of them avail from EPC EPC2103ENG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET15910191 from leading EPC, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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