Infineon Technologies BSO203PHXUMA1

BSO203PHXUMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
21mOhm @ 8.2A, 4.5V
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 7A 1.6W Surface Mount P-DSO-8
Input Capacitance (Ciss) (Max) @ Vds:
3750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 100µA
Series:
OptiMOS™
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
P-DSO-8
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.6W
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
Infineon Technologies
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This is manufactured by Infineon Technologies. The manufacturer part number is BSO203PHXUMA1. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 21mohm @ 8.2a, 4.5v. It features mosfet array 2 p-channel (dual) 20v 7a 1.6w surface mount p-dso-8. The product's input capacitance at maximum includes 3750pf @ 15v. The maximum gate charge and given voltages include 39nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 100µa. The product optimos™, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). p-dso-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 1.6w. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 7a. The infineon technologies's product offers user-desired applications.

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Mult Dev EOL 24/Jun/2020(PCN Obsolescence/ EOL)
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Part Number Guide(Other Related Documents)

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FAQs

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Yes. We ship BSO203PHXUMA1 Internationally to many countries around the world.