Renesas Electronics America UPA2670T1R-E2-AX

Renesas Electronics America

Product Information

FET Feature:
Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs:
79mOhm @ 1.5A, 4.5V
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 3A 2.3W Surface Mount 6-HUSON (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
473pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
5.1nC @ 4.5V
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-WDFN Exposed Pad
Supplier Device Package:
6-HUSON (2x2)
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
2.3W
Current - Continuous Drain (Id) @ 25°C:
3A
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is UPA2670T1R-E2-AX. The FET features of the product include logic level gate, 1.8v drive. It has a maximum Rds On and voltage of 79mohm @ 1.5a, 4.5v. It features mosfet array 2 p-channel (dual) 20v 3a 2.3w surface mount 6-huson (2x2). The product's input capacitance at maximum includes 473pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 5.1nc @ 4.5v. The product has a 20v drain to source voltage. Moreover, the product comes in 6-wdfn exposed pad. 6-huson (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 2.3w. The continuous current drain at 25°C is 3a. The renesas electronics america's product offers user-desired applications.

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Multiple Devices 28/Aug/2013(PCN Obsolescence/ EOL)
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Wafer Fabrication Site Change 10/Oct/2013(PCN Assembly/Origin)
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uPA2670T1R-E2-AX(Datasheets)

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