Renesas Electronics America RJM0603JSC-00#12

Renesas Electronics America

Product Information

FET Feature:
Logic Level Gate, 4.5V Drive
Rds On (Max) @ Id, Vgs:
20mOhm @ 10A, 10V
Detailed Description:
Mosfet Array 3 N and 3 P-Channel (3-Phase Bridge) 60V 20A 54W Surface Mount 20-HSOP
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Series:
Automotive, AEC-Q101
Package / Case:
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package:
20-HSOP
Packaging:
Tray
Operating Temperature:
175°C
FET Type:
3 N and 3 P-Channel (3-Phase Bridge)
Customer Reference:
Power - Max:
54W
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
20A
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJM0603JSC-00#12. The FET features of the product include logic level gate, 4.5v drive. It has a maximum Rds On and voltage of 20mohm @ 10a, 10v. It features mosfet array 3 n and 3 p-channel (3-phase bridge) 60v 20a 54w surface mount 20-hsop. The product's input capacitance at maximum includes 2600pf @ 10v. The maximum gate charge and given voltages include 43nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product automotive, aec-q101, is a highly preferred choice for users. Moreover, the product comes in 20-soic (0.433", 11.00mm width) exposed pad. 20-hsop is the supplier device package value. In addition, tray is the available packaging type of the product. The product has 175°c operating temperature range. It carries FET type 3 n and 3 p-channel (3-phase bridge). The maximum power of the product is 54w. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 20a. The renesas electronics america's product offers user-desired applications.

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RJM0603JSC(Datasheets)

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