Toshiba Semiconductor and Storage TPC8208(TE12L,Q)

TPC8208-TE12L-Q- Toshiba Semiconductor and Storage TPC8208(TE12L,Q)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
SSM6N7002
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 5A 450mW Surface Mount 8-SOP (5.5x6.0)
Input Capacitance (Ciss) (Max) @ Vds:
780pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
9.5nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 200µA
Series:
*
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
50mOhm @ 2.5A, 4V
Supplier Device Package:
8-SOP (5.5x6.0)
Packaging:
Digi-Reel®
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
450mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
5A
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8208(TE12L,Q). The FET features of the product include logic level gate. Base Part Number: ssm6n7002. It features mosfet array 2 n-channel (dual) 20v 5a 450mw surface mount 8-sop (5.5x6.0). The product's input capacitance at maximum includes 780pf @ 10v. The maximum gate charge and given voltages include 9.5nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 200µa. Moreover, the product comes in 8-soic (0.173", 4.40mm width). It has a maximum Rds On and voltage of 50mohm @ 2.5a, 4v. 8-sop (5.5x6.0) is the supplier device package value. In addition, digi-reel® is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 450mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 5a. The toshiba semiconductor and storage's product offers user-desired applications.

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TPC8208(Datasheets)
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Mosfets Prod Guide(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Toshiba Semiconductor and Storage TPC8208(TE12L,Q) and the best services all around the world ET14929834. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Toshiba Semiconductor and Storage TPC8208(TE12L,Q), also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Toshiba Semiconductor and Storage, commonly silicon.

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