Toshiba Semiconductor and Storage SSM6N42FE(TE85L,F)

SSM6N42FE-TE85L-F- Toshiba Semiconductor and Storage SSM6N42FE(TE85L,F)
SSM6N42FE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
240mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C:
800mA
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
90pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Power - Max:
150mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6N42
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N42FE(TE85L,F). The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. The maximum gate charge and given voltages include 2nc @ 4.5v. It has a maximum Rds On and voltage of 240mohm @ 500ma, 4.5v. The continuous current drain at 25°C is 800ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 90pf @ 10v. The product is available in surface mount configuration. es6 is the supplier device package value. The maximum power of the product is 150mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6n42, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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