Toshiba Semiconductor and Storage SSM6N37FE,LM(T

SSM6N37FE-LM-T Toshiba Semiconductor and Storage SSM6N37FE,LM(T
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
2.2 Ohm @ 100mA, 4.5V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 250mA 150mW Surface Mount ES6
Input Capacitance (Ciss) (Max) @ Vds:
12pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Standard Package:
1
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Power - Max:
150mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
250mA
Other Names:
SSM6N37FELM(TCT SSM6N37FELMCT SSM6N37FELMCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N37FE,LM(T. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 2.2 ohm @ 100ma, 4.5v. It features mosfet array 2 n-channel (dual) 20v 250ma 150mw surface mount es6. The product's input capacitance at maximum includes 12pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. It is available in the standard package of 1. Moreover, the product comes in sot-563, sot-666. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 150mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 250ma. Alternative Names include ssm6n37felm(tct ssm6n37felmct ssm6n37felmct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Toshiba Semiconductor and Storage SSM6N37FE,LM(T and the best services all around the world ET14928575. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Toshiba Semiconductor and Storage SSM6N37FE,LM(T, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Toshiba Semiconductor and Storage, commonly silicon.

Our Toshiba Semiconductor and Storage SSM6N37FE,LM(T is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SSM6N37FE,LM(T. We stock a large inventory containing a wide range of variety ET14928575, differentiates by its unique features Toshiba Semiconductor and Storage. We also have discounts for potential customers and let it until most of them avail from Toshiba Semiconductor and Storage SSM6N37FE,LM(T. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14928575 from leading Toshiba Semiconductor and Storage, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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