Vishay Siliconix SI7960DP-T1-GE3

SI7960DP-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs:
21mOhm @ 9.7A, 10V
edacadModel:
SI7960DP-T1-GE3 Models
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
6.2A
edacadModelUrl:
/en/models/1995586
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8 Dual
Power - Max:
1.4W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7960
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI7960DP-T1-GE3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8 dual. It has a maximum Rds On and voltage of 21mohm @ 9.7a, 10v. The maximum gate charge and given voltages include 75nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 6.2a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® so-8 dual is the supplier device package value. The maximum power of the product is 1.4w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si7960, a base product number of the product. The product is designated with the ear99 code number.

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Mosfet EOL 24/Jun/2015(PCN Obsolescence/ EOL)
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SI7960DP-T1-GE3(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Vishay Siliconix SI7960DP-T1-GE3 and the best services all around the world ET14865274. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Vishay Siliconix SI7960DP-T1-GE3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Vishay Siliconix, commonly silicon.

Our Vishay Siliconix SI7960DP-T1-GE3 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SI7960DP-T1-GE3. We stock a large inventory containing a wide range of variety ET14865274, differentiates by its unique features Vishay Siliconix. We also have discounts for potential customers and let it until most of them avail from Vishay Siliconix SI7960DP-T1-GE3. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14865274 from leading Vishay Siliconix, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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